Strained layer Type II GaInSb/InAs superlattice detectors operating at 9 microns in the infrared region were grown for the first time by atmospheric pressure OMVPE. Detection window can be tailored in the 4-24 micron range as desired by tailoring the composition and/or superlattice period. The latter effect also enhanced the absorbance edge. Full p-n photodiodes were fabricated.